inchange semiconductor isc product specification isc silicon pnp darlington power transistor TIP146T description high dc current gain- : h fe = 1000(min)@ i c = - 5a collector-emitter sustaining voltage- : v ceo(sus) = -80v(min) complement to type tip141t applications designed for general purpose amplifier and low frequency switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a i b b base current- continuous -0.5 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.56 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor TIP146T electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -30ma, i b = 0 -80 v v ce (sat) -1 collector-emitter saturation voltage i c = -5a ,i b = -10ma -2.0 v v ce (sat) -2 collector-emitter saturation voltage i c = -10a ,i b = -40ma -3.0 v v be (sat) base-emitter saturation voltage i c = -10a ,i b = -40ma -3.5 v v be (on) base-emitter on voltage i c = -10a ; v ce = -4v -3.0 v i cbo collector cutoff current v cb = -80v, i e = 0 -1 ma i ceo collector cutoff current v ce = -40v, i b = 0 -2 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2 ma h fe-1 dc current gain i c = -5a; v ce = -4v 1000 h fe-2 dc current gain i c = -10a; v ce = -4v 500 switching times t d delay time 0.15 s t r rise time 0.55 s t stg storage time 2.5 s t f fall time v cc = -30 v, i c = - 5.0 a, i b1 = -i b2 = -20 ma; t p = 20 s duty cycle 20% 2.5 s isc website www.iscsemi.cn
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